JPH0234382B2 - - Google Patents

Info

Publication number
JPH0234382B2
JPH0234382B2 JP58008014A JP801483A JPH0234382B2 JP H0234382 B2 JPH0234382 B2 JP H0234382B2 JP 58008014 A JP58008014 A JP 58008014A JP 801483 A JP801483 A JP 801483A JP H0234382 B2 JPH0234382 B2 JP H0234382B2
Authority
JP
Japan
Prior art keywords
developer
solution
weight
amount
cation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58008014A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58150949A (ja
Inventor
Reimondo Gairudo Jon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JPS58150949A publication Critical patent/JPS58150949A/ja
Publication of JPH0234382B2 publication Critical patent/JPH0234382B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58008014A 1982-01-21 1983-01-20 ポジ型感光性組成物用の現像溶液 Granted JPS58150949A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/341,419 US4423138A (en) 1982-01-21 1982-01-21 Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
US341419 1994-11-17

Publications (2)

Publication Number Publication Date
JPS58150949A JPS58150949A (ja) 1983-09-07
JPH0234382B2 true JPH0234382B2 (en]) 1990-08-02

Family

ID=23337483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58008014A Granted JPS58150949A (ja) 1982-01-21 1983-01-20 ポジ型感光性組成物用の現像溶液

Country Status (5)

Country Link
US (1) US4423138A (en])
EP (1) EP0089249B1 (en])
JP (1) JPS58150949A (en])
CA (1) CA1176901A (en])
DE (1) DE3376769D1 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0284776U (en]) * 1988-12-21 1990-07-02

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
DE3230171A1 (de) * 1982-08-13 1984-02-16 Hoechst Ag, 6230 Frankfurt Waessrig-alkalische loesung und verfahren zum entwickeln von positiv-arbeitenden reproduktionsschichten
JPS59182444A (ja) * 1983-04-01 1984-10-17 Sumitomo Chem Co Ltd ポジ型フオトレジストの改良現像液
JPS59219743A (ja) * 1983-05-28 1984-12-11 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト現像液
US4556629A (en) * 1983-12-21 1985-12-03 Morton Thiokol, Inc. Developer composition for positive photoresists using solution with cyclic quaternary ammonium hydroxides
US4606999A (en) * 1983-12-21 1986-08-19 Thiokol Corporation Development of positive photoresists using cyclic quaternary ammonium hydroxides
US4711836A (en) * 1984-09-10 1987-12-08 Olin Hunt Specialty Products, Inc. Development of positive-working photoresist compositions
JPH063549B2 (ja) * 1984-12-25 1994-01-12 株式会社東芝 ポジ型フォトレジスト現像液組成物
JPH0727219B2 (ja) * 1985-04-26 1995-03-29 日立化成工業株式会社 ネガ型感光性組成物用現像液
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
JPS62160441A (ja) * 1986-01-09 1987-07-16 Hitachi Chem Co Ltd ホトレジスト用感光性組成物
US4806453A (en) * 1986-05-07 1989-02-21 Shipley Company Inc. Positive acting bilayer photoresist development
US5902718A (en) * 1990-04-27 1999-05-11 Mitsubishi Denki Kabushiki Kaisha Methods and developer for developing a positive photoresist
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5476320A (en) * 1992-12-28 1995-12-19 Sumitomo Chemical Co., Ltd. Developer preparing apparatus and developer preparing method
KR19990037527A (ko) * 1997-10-31 1999-05-25 후지쯔 가부시끼가이샤 폴리이미드계 감광성 수지조성물용 현상액
US6162592A (en) * 1998-10-06 2000-12-19 Wisconsin Alumni Research Foundation Methods for decreasing surface roughness in novolak-based resists
US6783914B1 (en) 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
JP4320312B2 (ja) * 2005-06-02 2009-08-26 株式会社日立製作所 相変化膜を含む記録媒体の製造方法
US8852854B2 (en) * 2007-02-21 2014-10-07 Advanced Micro Devices, Inc. Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis
US20110159447A1 (en) 2009-12-25 2011-06-30 Tokyo Ohka Kogyo Co., Ltd. Developing solution for photolithography, method for forming resist pattern, and method and apparatus for producing developing solution for photolithography
JP5501754B2 (ja) * 2009-12-25 2014-05-28 東京応化工業株式会社 フォトリソグラフィ用現像液の製造方法及び製造装置
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173788A (en) * 1960-02-10 1965-03-16 Gen Aniline & Film Corp Developing positive working photolitho-graphic printing plates containing diazo oxides
US3637384A (en) * 1969-02-17 1972-01-25 Gaf Corp Positive-working diazo-oxide terpolymer photoresists
BE793490A (fr) 1972-05-23 1973-06-29 Hunt Chem Corp Philip A Article sensible a la lumiere comprenant un phenolate de diazoquinone, un liant polymerique, et une diazoquinone-siloxane
US3868254A (en) * 1972-11-29 1975-02-25 Gaf Corp Positive working quinone diazide lithographic plate compositions and articles having non-ionic surfactants
US4174222A (en) * 1975-05-24 1979-11-13 Tokyo Ohka Kogyo Kabushiki Kaisha Positive-type O-quinone diazide containing photoresist compositions
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
EP0000224A1 (en) * 1977-06-29 1979-01-10 THE PROCTER & GAMBLE COMPANY Liquid detergent composition for improved greasy soil removal
US4141733A (en) * 1977-10-25 1979-02-27 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
US4294911A (en) * 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
EP0062733B1 (en) * 1981-04-10 1986-01-02 Shipley Company Inc. Metal ion-free photoresist developer composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0284776U (en]) * 1988-12-21 1990-07-02

Also Published As

Publication number Publication date
DE3376769D1 (en) 1988-06-30
US4423138A (en) 1983-12-27
EP0089249B1 (en) 1988-05-25
EP0089249A3 (en) 1984-07-25
CA1176901A (en) 1984-10-30
EP0089249A2 (en) 1983-09-21
JPS58150949A (ja) 1983-09-07

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